advanced n-ch power mosfet.
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* High Voltage : BVDSS=200V(Min.) Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)
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Features
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* High Voltage : BVDSS=200V(Min.) Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Ty.
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